Assignment

1. Calculate the resistivity of a Germanium semiconductor at room temperature using the four-probe method. Adjust the current source to 30 mA in the simulator.
2. Measure the change in resistivity of Germanium when the temperature is increased from 30°C to 50°C.
3. Measure the voltage developed across the inner probes of the four-probe when it is placed on a Silicon semiconductor by applying a current of 100 mA at room temperature.
4. Calculate the resistivity of Silicon at 100°C by the four-probe method by applying 20 mA current across the outer probes.
5. Measure the voltage difference developed across the probes at 80 mA for Germanium when the temperature is decreased from 90°C to 30°C.